Characterization of CMOS compatible waveguide-coupled leaky-mode photodetectors

Author

Guangwei Yuan ; Pownall, R. ; Nikkel, P. ; Thangaraj, C. ; Chen, T.W. ; Lear, K.L.

Author_Institution

Dept. of Electr. & Comput. Eng., Colorado State Univ., Fort Collins, CO

Volume

18

Issue

15

fYear

2006

Firstpage

1657

Lastpage

1659

Abstract

Near-field scanning optical microscopy has been employed for the first time to analyze integrated photodetectors. Waveguide-coupled leaky-mode polysilicon metal-semiconductor-metal photodiodes fabricated in commercial complementary metal-oxide-semiconductor technology for on-chip optical interconnects exhibit a measured effective absorption coefficient of 0.67 dB/mum allowing a 10-mum-long detector to absorb 83% of the light in the waveguide with an estimated responsivity of 0.35 A/W at 654 nm. The measured effective absorption coefficient is in good agreement with effective index mode overlap calculations

Keywords

CMOS integrated circuits; absorption coefficients; integrated optics; metal-semiconductor-metal structures; near-field scanning optical microscopy; optical interconnections; optical waveguides; photodetectors; photodiodes; 10 mum; CMOS; absorption coefficient; effective index mode; near-field scanning optical microscopy; optical interconnects; photodetectors; polysilicon metal-semiconductor-metal photodiodes; waveguide coupling; Absorption; CMOS technology; Integrated optics; Optical films; Optical interconnections; Optical microscopy; Optical waveguides; Photodetectors; Photodiodes; Silicon; Near-field scanning optical microscopy (NSOM); silicon integrated photonics; waveguide-coupled leaky-mode photodetector;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2006.879527

Filename

1661681