DocumentCode
1049688
Title
Series resistance effects in semiconductor CV profiling
Author
Wiley, John D. ; Miller, G.L.
Author_Institution
Bell Telephone Laboratories, Murray Hill, N. J.
Volume
22
Issue
5
fYear
1975
fDate
5/1/1975 12:00:00 AM
Firstpage
265
Lastpage
272
Abstract
The effects of series resistance on semiconductor doping profiles obtained by conventional CV analysis are discussed, and it is shown that this resistance can cause extremely large errors in the profiles. It is demonstrated that the existence of such errors can be inferred from suitable RF phase angle measurements obtained during the CV profiling process, and that this information can be used to correct distorted profiles. A theoretical analysis and several computer simulations are presented in order to illustrate the nature of the problem and the methods by which accurate profiles can be obtained. All of the behavior predicted by computer simulations is verified by experimental examples.
Keywords
Cause effect analysis; Computer errors; Computer simulation; Distortion measurement; Electrical resistance measurement; Error correction; Goniometers; Phase measurement; Radio frequency; Semiconductor device doping;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1975.18117
Filename
1477952
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