Comments on "Measurements and interpretation of low frequency noise in FET\´s

It is shown that, according to the theories of 1/f noise in MOST´s by Klaassen [1] and Berz [2], the mean-square equivalent noise voltage at the gate Vgn²is proportional to the effective surface state density Nss, and not to NssVg(Vg= gate voltage), as was stated for these theories by Das and Moore. Therefore, contrary to what was concluded by Das and Moore, there is no conflict between these theories and the experimental results by Das and Moore which show that Vgn²varies with gate voltage as Nss.