Title :
Calculation of p-type GaAs IMPATT admittance
Author :
Sudbury, Roger W. ; Laton, Richard W.
Author_Institution :
Massachusetts Institute of Technology. Lexington, Mass.
fDate :
5/1/1975 12:00:00 AM
Abstract :
The unequal ionization rates reported for holes and electrons in GaAs have been used to calculate the small-signal admittance for a complimentary p-type IMPATT diode. For the uniformly doped n and p device structures considered, the p-type structure is found to have significantly increased negative conductance.
Keywords :
Admittance; Current density; Cutoff frequency; Dielectric constant; Diodes; Electron mobility; Gallium arsenide; Impurities; Ionization; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1975.18122
