• DocumentCode
    1049805
  • Title

    Deep-channel MOS transistor

  • Author

    Berger, Josef

  • Author_Institution
    Hewlett Packard Laboratories, Palo Alto, Calif.
  • Volume
    22
  • Issue
    6
  • fYear
    1975
  • fDate
    6/1/1975 12:00:00 AM
  • Firstpage
    314
  • Lastpage
    319
  • Abstract
    A new type of ion-implanted MOS transistor is described. The transistor functions, for example, as an integrating nondestructively readable photosensor and its technology is fully compatible with the advanced MOS integrated circuits.
  • Keywords
    Boron; Charge coupled devices; Doping profiles; Implants; Integrated circuit technology; MOS integrated circuits; MOSFETs; Semiconductor device doping; Substrates; Transistors;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1975.18129
  • Filename
    1477964
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1049805