Title :
Deep-channel MOS transistor
Author_Institution :
Hewlett Packard Laboratories, Palo Alto, Calif.
fDate :
6/1/1975 12:00:00 AM
Abstract :
A new type of ion-implanted MOS transistor is described. The transistor functions, for example, as an integrating nondestructively readable photosensor and its technology is fully compatible with the advanced MOS integrated circuits.
Keywords :
Boron; Charge coupled devices; Doping profiles; Implants; Integrated circuit technology; MOS integrated circuits; MOSFETs; Semiconductor device doping; Substrates; Transistors;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1975.18129
