Title :
Bipolar transistor modeling of avalanche generation for computer circuit simulation
Author :
Dutton, Robert W.
Author_Institution :
Stanford University, Stanford, Calif.
fDate :
6/1/1975 12:00:00 AM
Abstract :
An avalanche generation model is developed and incorporated into computer circuit analysis programs SLIC and NICAP. A modified form of Miller´s empirical expression for generation is found to agree well with measured data for Western Electric and commercial n-p-n transistors. Measurement techniques and parameter determination for the three model coefficients are discussed. Equation constraints appropriate for computer implementation are presented.
Keywords :
Application software; Avalanche breakdown; Bipolar integrated circuits; Bipolar transistors; Breakdown voltage; Circuit analysis computing; Circuit simulation; Integrated circuit modeling; Physics; Semiconductor process modeling;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1975.18132
