• DocumentCode
    1049837
  • Title

    Bipolar transistor modeling of avalanche generation for computer circuit simulation

  • Author

    Dutton, Robert W.

  • Author_Institution
    Stanford University, Stanford, Calif.
  • Volume
    22
  • Issue
    6
  • fYear
    1975
  • fDate
    6/1/1975 12:00:00 AM
  • Firstpage
    334
  • Lastpage
    338
  • Abstract
    An avalanche generation model is developed and incorporated into computer circuit analysis programs SLIC and NICAP. A modified form of Miller´s empirical expression for generation is found to agree well with measured data for Western Electric and commercial n-p-n transistors. Measurement techniques and parameter determination for the three model coefficients are discussed. Equation constraints appropriate for computer implementation are presented.
  • Keywords
    Application software; Avalanche breakdown; Bipolar integrated circuits; Bipolar transistors; Breakdown voltage; Circuit analysis computing; Circuit simulation; Integrated circuit modeling; Physics; Semiconductor process modeling;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1975.18132
  • Filename
    1477967
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1049837