• DocumentCode
    1049862
  • Title

    ZnO/Zn/sub 0.85/Mg/sub 0.15/O superlattice nanoneedles grown by pulsed laser deposition

  • Author

    Huo, Baoyu ; Hu, Lei ; Zhang, Haijun ; Zhao, Zhen ; Fu, Qiang ; Ma, Jiaxin

  • Author_Institution
    Dept. of Phys., Dalian Univ. of Technol., Dalian
  • Volume
    3
  • Issue
    4
  • fYear
    2008
  • fDate
    12/1/2008 12:00:00 AM
  • Firstpage
    117
  • Lastpage
    120
  • Abstract
    Superlattices of ZnO/Zn0.85Mg0.15O were grown on a sapphire (0001) substrate by the pulsed laser deposition method. Before the growth, ZnO buffer layers were grown at 650 C and an oxygen pressure of 60 Pa for 30 min. The results of the scanning electron microscope exhibit that the films with a buffer layer consist of well c-axis oriented nano-needles with a size range from 50 to 150 nm. Compared with the film without a buffer layer, the film with a buffer layer has a stronger peak energy when the well widths are almost the same. It is evident that the buffer layer could increase the quality of the superlattice and this nanostructure would be useful to research the microcavity.
  • Keywords
    II-VI semiconductors; microcavities; nanostructured materials; photoluminescence; pulsed laser deposition; sapphire; scanning electron microscopy; superlattices; wide band gap semiconductors; zinc compounds; ZnO-Zn0.85Mg0.15O; c-axis oriented nanoneedles; microcavity; nanostructure; oxygen pressure; photoluminescence; pressure 60 Pa; pulsed laser deposition; sapphire (0001) substrate; scanning electron microscope; size 50 nm to 150 nm; superlattice nanoneedles; time 30 min;
  • fLanguage
    English
  • Journal_Title
    Micro & Nano Letters, IET
  • Publisher
    iet
  • ISSN
    1750-0443
  • Type

    jour

  • DOI
    10.1049/mnl:20080034
  • Filename
    4730238