DocumentCode :
1049862
Title :
ZnO/Zn/sub 0.85/Mg/sub 0.15/O superlattice nanoneedles grown by pulsed laser deposition
Author :
Huo, Baoyu ; Hu, Lei ; Zhang, Haijun ; Zhao, Zhen ; Fu, Qiang ; Ma, Jiaxin
Author_Institution :
Dept. of Phys., Dalian Univ. of Technol., Dalian
Volume :
3
Issue :
4
fYear :
2008
fDate :
12/1/2008 12:00:00 AM
Firstpage :
117
Lastpage :
120
Abstract :
Superlattices of ZnO/Zn0.85Mg0.15O were grown on a sapphire (0001) substrate by the pulsed laser deposition method. Before the growth, ZnO buffer layers were grown at 650 C and an oxygen pressure of 60 Pa for 30 min. The results of the scanning electron microscope exhibit that the films with a buffer layer consist of well c-axis oriented nano-needles with a size range from 50 to 150 nm. Compared with the film without a buffer layer, the film with a buffer layer has a stronger peak energy when the well widths are almost the same. It is evident that the buffer layer could increase the quality of the superlattice and this nanostructure would be useful to research the microcavity.
Keywords :
II-VI semiconductors; microcavities; nanostructured materials; photoluminescence; pulsed laser deposition; sapphire; scanning electron microscopy; superlattices; wide band gap semiconductors; zinc compounds; ZnO-Zn0.85Mg0.15O; c-axis oriented nanoneedles; microcavity; nanostructure; oxygen pressure; photoluminescence; pressure 60 Pa; pulsed laser deposition; sapphire (0001) substrate; scanning electron microscope; size 50 nm to 150 nm; superlattice nanoneedles; time 30 min;
fLanguage :
English
Journal_Title :
Micro & Nano Letters, IET
Publisher :
iet
ISSN :
1750-0443
Type :
jour
DOI :
10.1049/mnl:20080034
Filename :
4730238
Link To Document :
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