DocumentCode
1049863
Title
The short-channel IGFET
Author
Lazarus, M.J.
Volume
22
Issue
6
fYear
1975
fDate
6/1/1975 12:00:00 AM
Firstpage
351
Lastpage
351
Abstract
Formulas are presented which show that arbitrarily short-channel length for an insulated-gate field-effect transistor does not lead to arbitrarily large transconductance. Instead, the Boltzmann limit is indicated.
Keywords
CMOS logic circuits; Equations; FETs; Government; Insulation; Large scale integration; Logic circuits; Solid state circuits; Threshold voltage; Transconductance;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1975.18135
Filename
1477970
Link To Document