• DocumentCode
    1049891
  • Title

    Fabrication and Characterization of Germanium ion-implanted IGFET´s

  • Author

    Wang, K.L. ; Gray, P.V.

  • Author_Institution
    General Electric Corporate Research and Development, Schenectady, N. Y.
  • Volume
    22
  • Issue
    6
  • fYear
    1975
  • fDate
    6/1/1975 12:00:00 AM
  • Firstpage
    353
  • Lastpage
    355
  • Abstract
    Fabrication of ion-implanted germanium IGFET´s is described. The characteristics of the devices are reported and the measured channel mobilities are related to annealing procedures for reducing interface state density. Charged oxide traps and interface states near the band edges scatter minority carriers in the channel and thus are responsible for reduction of the channel mobility.
  • Keywords
    Annealing; Electrodes; Electronic ballasts; Fabrication; Germanium; Interface states; Metallization; Optical films; Silicon; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1975.18137
  • Filename
    1477972
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1049891