Title :
Functional operations of a high-resistivity n-GaAs diode by trap-controlled domain movement
Author_Institution :
Electrotechnical Laboratory, Tanashi, Tokyo
fDate :
6/1/1975 12:00:00 AM
Abstract :
Since a traveling high-field domain in a high-resistivity n-GaAs diode is composed of charges by trapped carriers, it does not easily disappear even after the external conditions to generate it are removed. By using this property of the domain, the diode is operated as a memory device.
Keywords :
Annealing; Argon; Density measurement; Diodes; Electron devices; Interface states; MOSFET circuits; Scattering; Surface charging; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1975.18138
