DocumentCode
1049900
Title
Functional operations of a high-resistivity n-GaAs diode by trap-controlled domain movement
Author
Tokumaru, Yozo
Author_Institution
Electrotechnical Laboratory, Tanashi, Tokyo
Volume
22
Issue
6
fYear
1975
fDate
6/1/1975 12:00:00 AM
Firstpage
355
Lastpage
357
Abstract
Since a traveling high-field domain in a high-resistivity n-GaAs diode is composed of charges by trapped carriers, it does not easily disappear even after the external conditions to generate it are removed. By using this property of the domain, the diode is operated as a memory device.
Keywords
Annealing; Argon; Density measurement; Diodes; Electron devices; Interface states; MOSFET circuits; Scattering; Surface charging; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1975.18138
Filename
1477973
Link To Document