• DocumentCode
    1049909
  • Title

    Frequency limits of GaAs and InP field-effect transistors

  • Author

    Maloney, T.J. ; Frey, Jeffrey

  • Author_Institution
    Cornell University, Ithaca, N. Y.
  • Volume
    22
  • Issue
    6
  • fYear
    1975
  • fDate
    6/1/1975 12:00:00 AM
  • Firstpage
    357
  • Lastpage
    358
  • Abstract
    Monte Carlo calculations of electron transport in InP and GaAs short-channel field-effect transisters (FET´s) show that a significant departure from the equilibrium velocity-field curve occurs in these devices. On the basis of these calculations, InP FET´s should have high-frequency performance superior to that of GaAs FET´s only for effective channel lengths in excess of 1.5 µ.
  • Keywords
    Electrons; FETs; Frequency response; Gallium arsenide; Indium phosphide; Military computing; Monte Carlo methods; Scattering parameters; Silicon; Variable speed drives;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1975.18139
  • Filename
    1477974
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1049909