DocumentCode :
1049951
Title :
A 60-GHz Millimeter-Wave Bandpass Filter Using 0.18- \\mu\\hbox {m} CMOS Technology
Author :
Hsu, Cheng-Ying ; Chen, Chu-Yu ; Chuang, Huey-Ru
Author_Institution :
Nat. Cheng Kung Univ., Tainan
Volume :
29
Issue :
3
fYear :
2008
fDate :
3/1/2008 12:00:00 AM
Firstpage :
246
Lastpage :
248
Abstract :
This letter presents the design and implementation of a 60-GHz millimeter-wave RF-integrated-circuit-on-chip bandpass filter using a 0.18-mum standard CMOS process. A planar ring resonator structure with dual-transmission zeros was adopted in the design of this CMOS filter. The die size of the chip is 1.148times1.49 mm2. The investigations of sensitivity to the insertion loss and the passband bandwidth for different perturbation stub sizes are also studied. The filter has a 3-dB bandwidth of about 12 GHz at the center frequency of 64 GHz. The measured insertion loss of the passband is about 4.9 dB, and the return loss is better than 10 dB within the passband.
Keywords :
CMOS integrated circuits; band-pass filters; millimetre wave filters; millimetre wave integrated circuits; CMOS filter design; RF-integrated-circuit-on-chip; dual-transmission zeros; frequency 60 GHz; frequency 64 GHz; insertion loss; loss 4.9 dB; millimeter-wave bandpass filter; planar ring resonator structure; size 0.18 mum; standard CMOS process; 60 GHz; Bandpass filter; RF integrated circuit (RFIC)-on-chip; complementary metal–oxide–semiconductor (CMOS); complementary metal–oxide–semiconductor (CMOS); dual mode; millimeter-wave; ring resonator;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2007.915369
Filename :
4441940
Link To Document :
بازگشت