Title :
Hafnium silicate nanocrystal memory using sol-gel-spin-coating method
Author :
You, Hsin-Chiang ; Hsu, Tze-Hsiang ; Ko, Fu-Hsiang ; Huang, Jiang-Wen ; Lei, Tan-Fu
Author_Institution :
Inst. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu
Abstract :
The authors fabricate the hafnium silicate nanocrystal memory for the first time using a very simple sol-gel-spin-coating method and 900 degC 1-min rapid thermal annealing (RTA). From the TEM identification, the nanocrystals are formed as the charge trapping layer after 900 degC 1-min RTA and the size is about 5 nm. They demonstrate the composition of nanocrystal is hafnium silicate from the X-ray-photoelectron-spectroscopy analysis. They verify the electric properties in terms of program/erase (P/E) speed, charge retention, and endurance. The sol-gel device exhibits the long charge retention time of 104 s with only 6% charge loss, and good endurance performance for P/E cycles up to 105
Keywords :
X-ray photoelectron spectra; hafnium compounds; nanostructured materials; rapid thermal annealing; semiconductor storage; sol-gel processing; transmission electron microscopy; 1 min; 900 C; TEM identification; X-ray photoelectron spectroscopy; charge retention; charge trapping layer; nanocrystal memory; program/erase speed; rapid thermal annealing; sol-gel spin-coating method; Chemical vapor deposition; Coatings; Electron traps; Hafnium; Nanocrystals; Performance loss; Rapid thermal annealing; SONOS devices; Silicon; Tunneling; Charge retention; endurance; hafnium silicate; nanocrystal memory; sol–gel spin coating;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2006.879022
