Title :
Applications of the electron beam exposure system
Author :
Pease, R. W F ; Ballantyne, Peter J. ; Henderson, Richard C. ; Voshchenkov, Alexander M. ; Yau, Leopoldo D.
Author_Institution :
Bell Laboratories, Murray Hill, N. J.
fDate :
7/1/1975 12:00:00 AM
Abstract :
Successful application of high-speed scanning electron lithography machines such as the electron beam exposure system (EBES) requires the development of suitable materials and processes. We describe how electron resists with improved sensitivity have been used to make high-quality photolithographic master masks in which 1-µm lines and spaces are resolved and also to make MOS integrated circuits with improved packing density and performance.
Keywords :
Chemicals; Chromium; Electron beams; Error correction; Fabrication; Inspection; Lithography; MOS integrated circuits; Resists; Throughput;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1975.18150
