Title :
Fabrication of silicon MOS devices using X-ray lithography
Author :
Bernacki, Stephen E. ; Smith, Henry I.
Author_Institution :
Massachusetts Institute of Technology, Lexington, Mass.
fDate :
7/1/1975 12:00:00 AM
Abstract :
This paper reports on the high-yield fabrication of silicon MOS transistors using X-ray lithography, measurements and annealing of fast surface states and oxide charges created by X-ray irradiation, and design considerations for submicrometer linewidth X-ray lithography on 7.5-cm diameter silicon wafers.
Keywords :
Aluminum; Annealing; Capacitance measurement; MOS capacitors; MOS devices; MOSFETs; Optical device fabrication; Optical devices; Silicon; X-ray lithography;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1975.18155
