Title :
Impact of the interfacial layer on the low-frequency noise (1/f) behavior of MOSFETs with advanced gate stacks
Author :
Crupi, F. ; Srinivasan, P. ; Magnone, P. ; Simoen, E. ; Pace, C. ; Misra, D. ; Claeys, C.
Author_Institution :
Dipt. di Elettronica, Informatica e Sistemistica, Calabria Univ.
Abstract :
The impact of the interfacial layer thickness on the low-frequency (LF) noise (1/f noise) behavior of n- and p-channel MOSFETs with high-kappa gate dielectrics and metal gates is investigated. Decreasing the interfacial layer thickness from 0.8 to 0.4 nm affects the 1/f noise in two ways. 1) The mobility fluctuations mechanism becomes the main source of 1/f noise not only on pMOS devices, as usually observed, but also on nMOS devices. 2) A significant increase of the Hooge´s parameter is observed for both types of MOSFETs. These experimental findings indicate that bringing the high-kappa layer closer to the Si-SiO2 interface enhances the 1/f noise mainly due to mobility fluctuations
Keywords :
1/f noise; MOSFET; dielectric materials; interface states; semiconductor device noise; silicon compounds; 0.8 to 0.4 nm; 1/f behavior; Hooge parameter; Si-SiO2; gate stacks; high-k gate dielectrics; interfacial layer thickness; low-frequency noise; metal gates; mobility fluctuations; n-channel MOSFET; nMOS devices; p-channel MOSFET; pMOS devices; Conductivity; Dielectric materials; Dielectric substrates; Fluctuations; Hafnium oxide; Inorganic materials; Low-frequency noise; MOS devices; MOSFET circuits; Threshold voltage; High-; Hooge´s parameter; interfacial layer; low-frequency (LF) noise; metal gates; mobility fluctuations;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2006.879028
