Title :
A computer simulation scheme for various solid-state devices
Author :
Yu, Se Puan ; Tantraporn, Wirojana
Author_Institution :
General Electric Research and Development Center, Schnectady, N. Y.
fDate :
8/1/1975 12:00:00 AM
Abstract :
The main computational scheme for the determination of the device-circuit interaction and the internal dynamics of the solid-state device are described. Certain important details are separately discussed in Appendixes. A unique feature in the simulation is the boundary condition at the electrode, characterized here by an energy barrier. Formulated in this way, successful simulations of the Gunn diode, injection-controlled amplifier, IMPATT diode, TRAPATT condition, controlled-avalanche transit-time (CATT) triode, as well as other phenomena reported in the literature, have been demonstrated.
Keywords :
Boundary conditions; Circuit simulation; Computational modeling; Computer simulation; Frequency; Gunn devices; Schottky diodes; Solid state circuits; Tuned circuits; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1975.18172
