• DocumentCode
    1050364
  • Title

    Neutron-induced noise in junction field-effect transistors

  • Author

    Wang, Kenneth K. ; Van Der Ziel, Aldert ; Chenette, Eugene R.

  • Author_Institution
    University of Florida, Gainesville, Fla.
  • Volume
    22
  • Issue
    8
  • fYear
    1975
  • fDate
    8/1/1975 12:00:00 AM
  • Firstpage
    591
  • Lastpage
    593
  • Abstract
    A modified depletion-layer generation-recombination (g-r) noise theory is given for defects with energy levels away from the middle of the band gap. Measurements are presented on JFET´s irradiated with neutrons. The g-r noise spectra of these indicate that five distinct defects are introduced; the results are explained with the modified theory.
  • Keywords
    Electrons; Energy states; FETs; Fluctuations; Neodymium; Neutrons; Noise generators; Noise level; Photonic band gap; Temperature distribution;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1975.18182
  • Filename
    1478017
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1050364