Title :
Generation-recombination noise produced in the channel of JFET´s
Author :
Hiatt, C.F. ; Van Der, Ziel A. ; van Vliet, K.M.
Author_Institution :
University of Florida, Gainesville, Fla.
fDate :
8/1/1975 12:00:00 AM
Abstract :
Measurements are presented of noise in JFET´s at low temperatures (80-200 K) for devices having a low pinch-off voltage. The noise spectra show the presence of several types of generation-recombination g-r processes. Two processes are attributed to traps in the channel. Further, at the lowest temperatures a long plateau, associated with donor transitions, is observed.
Keywords :
Charge carrier processes; Electron devices; Fluctuations; Heating; Ionization; Noise generators; Noise measurement; Notice of Violation; Pulse measurements; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1975.18187
