DocumentCode
1050421
Title
Theory of generation-recombination noise in the channel of junction field-effect transistors
Author
van Vliet, K.M. ; Hiatt, C.F.
Author_Institution
University of Florida, Gainesville, Fla.
Volume
22
Issue
8
fYear
1975
fDate
8/1/1975 12:00:00 AM
Firstpage
616
Lastpage
617
Abstract
A new derivation is given for the noise in JFET´s stemming from generation-recombination or trapping processes in the channel. For the case of a delta function carrier covariance, the result is the same as that of van der Ziel. However, the present derivation is more direct and can be easily extended to more general cases.
Keywords
Electron devices; FETs; Fluctuations; Frequency; Noise generators; Noise level; Noise measurement; Silicon; Temperature measurement; Thermal factors;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1975.18188
Filename
1478023
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