Title :
Theory of generation-recombination noise in the channel of junction field-effect transistors
Author :
van Vliet, K.M. ; Hiatt, C.F.
Author_Institution :
University of Florida, Gainesville, Fla.
fDate :
8/1/1975 12:00:00 AM
Abstract :
A new derivation is given for the noise in JFET´s stemming from generation-recombination or trapping processes in the channel. For the case of a delta function carrier covariance, the result is the same as that of van der Ziel. However, the present derivation is more direct and can be easily extended to more general cases.
Keywords :
Electron devices; FETs; Fluctuations; Frequency; Noise generators; Noise level; Noise measurement; Silicon; Temperature measurement; Thermal factors;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1975.18188