• DocumentCode
    1050421
  • Title

    Theory of generation-recombination noise in the channel of junction field-effect transistors

  • Author

    van Vliet, K.M. ; Hiatt, C.F.

  • Author_Institution
    University of Florida, Gainesville, Fla.
  • Volume
    22
  • Issue
    8
  • fYear
    1975
  • fDate
    8/1/1975 12:00:00 AM
  • Firstpage
    616
  • Lastpage
    617
  • Abstract
    A new derivation is given for the noise in JFET´s stemming from generation-recombination or trapping processes in the channel. For the case of a delta function carrier covariance, the result is the same as that of van der Ziel. However, the present derivation is more direct and can be easily extended to more general cases.
  • Keywords
    Electron devices; FETs; Fluctuations; Frequency; Noise generators; Noise level; Noise measurement; Silicon; Temperature measurement; Thermal factors;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1975.18188
  • Filename
    1478023