Title :
A BiCMOS Ultra-Wideband 3.1–10.6-GHz Front-End
Author :
Lee, Fred S. ; Chandrakasan, Anantha P.
Author_Institution :
Massachusetts Inst. of Technol., Cambridge, MA
Abstract :
This paper presents a direct-conversion receiver for FCC-compliant ultra-wideband (UWB) Gaussian-shaped pulses that are transmitted in one of fourteen 500-MHz-wide channels within the 3.1-10.6-GHz band. The receiver is fabricated in 0.18-mum SiGe BiCMOS. The packaged chip consists of an unmatched wideband low-noise amplifier (LNA), filter, phase-splitter, 5-GHz ISM band switchable notch filter, 3.1-10.6-GHz local oscillator (LO) amplifiers, mixers, and baseband channel-select filters/buffers. The required quadrature single-ended LO signals are generated externally. The average conversion gain and input P1dB are 32 dB and -41 dBm, respectively. The unmatched LNA provides a system noise figure of 3.3 to 5 dB over the entire band. The chip draws 30 mA from 1.8 V. To verify the unmatched LNA´s performance in a complete system, wireless testing of the front-end embedded in a full receiver at 100 Mbps reveals a 10-3 bit-error rate (BER) at -80 dBm sensitivity. The notch filter suppresses out-of-band interferers and reduces the effects of intermodulation products that appear in the baseband. BER improvements of an order of magnitude and greater are demonstrated with the filter
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; interference suppression; microwave receivers; ultra wideband communication; wireless channels; 0.18 micron; 1.8 V; 100 Mbit/s; 3.1 to 10.6 GHz; 3.3 to 5 dB; 30 mA; 500 MHz; BER; BiCMOS process; BiCMOS ultra-wideband front-end; FCC-compliant ultra-wideband pulses; Gaussian-shaped pulses; SiGe; UWB pulses; baseband channel-select buffers; baseband channel-select filters; bit-error rate; direct-conversion receiver; interference suppression; local oscillator amplifiers; out-of-band interferers; phase-splitter; switchable notch filter; system noise figure; unmatched LNA; unmatched low-noise amplifier; unmatched wideband amplifier; Baseband; BiCMOS integrated circuits; Bit error rate; Filters; Gaussian channels; Germanium silicon alloys; Low-noise amplifiers; Pulse amplifiers; Silicon germanium; Ultra wideband technology; BiCMOS; SiGe; direct conversion; low-noise amplifier (LNA); notch filter; phase-splitter; radio frequency (RF); receiver; ultra-wideband (UWB); unmatched;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2006.877270