DocumentCode :
105049
Title :
First Demonstration of Athermal Silicon Optical Interposers With Quantum Dot Lasers Operating up to 125 °C
Author :
Urino, Yutaka ; Hatori, Nobuaki ; Mizutani, Kenji ; Usuki, Tatsuya ; Fujikata, Junichi ; Yamada, Koji ; Horikawa, Tsuyoshi ; Nakamura, Takahiro ; Arakawa, Yasuhiko
Author_Institution :
Photonics Electron. Technol. Res. Assoc., Tsukuba, Japan
Volume :
33
Issue :
6
fYear :
2015
fDate :
March15, 15 2015
Firstpage :
1223
Lastpage :
1229
Abstract :
We previously proposed a photonics-electronics convergence system to solve bandwidth bottleneck problems among large-scale integrations (LSIs) and demonstrated a high bandwidth density with silicon optical interposers at room temperature. For practical applications, the interposers should be usable under high-temperature conditions or rapid temperature changes so that they can cope with the heat generated by the mounted LSIs. We designed and fabricated athermal silicon optical interposers integrated with temperature-insensitive components on a silicon substrate. An arrayed laser diode (LD) chip was a flip-chip bonded to the substrate. Each LD had multiple quantum dot layers with a 1.3-μm lasing wavelength. The output power was higher than 10 mW per channel up to 100 °C. Silicon optical modulator and germanium photodetector (PD) arrays were monolithically integrated on the substrate. The modulators were structured as symmetric Mach-Zehnder interferometers, which were inherently insensitive to temperature and wavelength. The phase shifters composed of p-i-n diodes were stable against temperature change under a constant bias-current condition. The PD photocurrent was also temperature insensitive, and the photo-to-dark current ratio was higher than 30 dB up to 100 °C. We achieved error-free data links at 20 Gbps and a high bandwidth density of 19 Tbps/cm2 operating up to 125 °C without adjusting the LDs, modulators, or PDs. The interposers are tolerant of the heat generated by the mounted LSIs and usable over the extended industrial temperature range without complex monitoring or feedback controls. The bandwidth density is sufficient for the needs of the late 2010s.
Keywords :
Mach-Zehnder interferometers; elemental semiconductors; flip-chip devices; germanium; integrated optics; integrated optoelectronics; large scale integration; laser feedback; monolithic integrated circuits; optical design techniques; optical fabrication; optical interconnections; optical modulation; optical phase shifters; p-i-n diodes; photodetectors; photoemission; quantum dot lasers; semiconductor laser arrays; silicon; LSI; PD photocurrent; Si-Ge; a flip-chip; arrayed laser diode chip; athermal silicon optical interposers; bandwidth bottleneck problems; bit rate 20 Gbit/s; constant bias-current condition; error-free data links; feedback control; high bandwidth density; large-scale integrations; monolithic integration; optical modulator; output power; p-i-n diodes; phase shifters; photo-to-dark current ratio; photodetector arrays; photonics-electronics convergence system; quantum dot lasers; quantum dot layers; room temperature; symmetric Mach-Zehnder interferometers; temperature-insensitive components; wavelength 1.3 mum; Adaptive optics; Optical device fabrication; Optical modulation; Optical waveguides; Silicon; Athermal silicon optical interposer; germanium photo detector; hybrid integration; inter-chip optical interconnects; photonics-electronics convergence system; quantum dot laser; silicon optical modulator; silicon photonics;
fLanguage :
English
Journal_Title :
Lightwave Technology, Journal of
Publisher :
ieee
ISSN :
0733-8724
Type :
jour
DOI :
10.1109/JLT.2014.2380811
Filename :
6994774
Link To Document :
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