Title :
A 50-µm plated-wire mainframe memory
Author :
Orihara, Shobu ; Kawakami, Susumu ; Hoshi, Toshihiro ; Segawa, Shohei
Author_Institution :
Fujitsu Laboratories, Ltd., Kawasaki, Japan
fDate :
9/1/1972 12:00:00 AM
Abstract :
A new plated-wire memory plane has been developed. The plated wire has 50-μm diameter and 6000-Å multi-layered magnetic film. The memory plane has the snap-in structure with permalloy side-keepers. The word line spacing is 0.8 mm and the sense-digit line spacing is 0.5 mm. Using this plane, a plated-wire mainframe memory has been designed for commercial use. It has a 64-kbyte capacity, a 300-ns access time and a 600-ns cycle time, and it is characterized by improved 1 cross-point/bit sense-digit organization. The well-defined parameters of the planes enable memory systems to be designed with improved cost performance.
Keywords :
Plated-wire memories; Circuits; Costs; Crosstalk; Diodes; Fabrication; Impedance; Magnetic films; Noise cancellation; Signal to noise ratio; Wires;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.1972.1067436