DocumentCode :
10506
Title :
A 6.13 µW and 96 dB CMOS Exponential Generator
Author :
Al-Tamimi, Karama Mohammed ; Al-Absi, Munir A.
Author_Institution :
Electr. Eng. Dept., King Fahd Univ. of Pet. & Miner., Dhahran, Saudi Arabia
Volume :
22
Issue :
11
fYear :
2014
fDate :
Nov. 2014
Firstpage :
2440
Lastpage :
2445
Abstract :
In this brief, a new low-voltage CMOS circuit to produce current-mode exponential characteristics is proposed. MOSFET transistors in weak-inversion region and translinear principle for the temperature cancellation were used. The functionality of the proposed design confirmed with 0.35 μm CMOS process technology using ±0.75 V supply voltage. Results demonstrate the theoretical analysis and verify the efficiency of the proposed structure compared with previously reported designs. Around 96 linear-in-dB output current range is achieved with ±0.5 dB linearity error over normalized input range from -5.75 to 5.75. The maximum deviation in the output current is ±1.27 and ±3.35 dB due to 100 °C temperature variations and ±10% supply voltage fluctuation, respectively.
Keywords :
CMOS analogue integrated circuits; MOSFET; low-power electronics; CMOS exponential generator; CMOS process technology; MOSFET transistors; current-mode exponential characteristics; linearity error; low-voltage CMOS circuit; power 6.13 muW; size 0.35 mum; supply voltage fluctuation; temperature 100 degC; temperature cancellation; temperature variation; theoretical analysis; translinear principle; weak-inversion region; CMOS integrated circuits; Function approximation; Generators; MOSFET; Temperature distribution; Very large scale integration; Approximation; CMOS; current-mode; exponential; linear-in-dB; translinear principle; weak inversion; weak inversion.;
fLanguage :
English
Journal_Title :
Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
1063-8210
Type :
jour
DOI :
10.1109/TVLSI.2013.2292093
Filename :
6678638
Link To Document :
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