Title :
A 3-V 4.25-Gb/s Laser Driver with 0.4-V Output Voltage Compliance
Author :
Fattaruso, John W. ; Sheahan, Benjamin
Author_Institution :
Texas Instrum. Inc., Dallas, TX
Abstract :
The design of a 155-Mb/s-4.25-Gb/s laser driver in SiGe BiCMOS is described. A large output voltage compliance range that allows DC coupling to the laser diode is achieved with a translinear pseudo-differential output driver. Active back-termination is provided at the modulation output pins. Careful design of the level shift stage affords low deterministic jitter over a very wide range of bit rates. The dynamic performance is preserved over a wide range of modulation current with a segmented driver slice scheme
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; driver circuits; jitter; semiconductor lasers; 0.4 V; 155 Mbit/s; 3 V; 4.25 Gbit/s; BiCMOS technology; DC coupling; SiGe; active back-termination; dynamic performance; laser diode; laser driver; level shift stage; low deterministic jitter; modulation current; modulation output pins; output voltage compliance; segmented driver slice scheme; translinear pseudo-differential output driver; BiCMOS integrated circuits; Bit rate; Diode lasers; Germanium silicon alloys; Jitter; Optical coupling; Optical design; Pins; Silicon germanium; Voltage; Active termination; laser driver; level shift;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2006.875288
