DocumentCode :
1050628
Title :
Liquid phase epitaxy of GaP by a temperature difference method under controlled vapor pressure
Author :
Nishizawa, Jun-ichi ; Okuno, Yasuo
Author_Institution :
Tohoku University, Sendai, Japan
Volume :
22
Issue :
9
fYear :
1975
fDate :
9/1/1975 12:00:00 AM
Firstpage :
716
Lastpage :
721
Abstract :
A series of experiments have been done in which the properties of GaP grown by liquid phase epitaxy (LPE) have been varied by providing an additional source of phosphorus via the vapor phase. The quality of the crystals, as judged from gross defect features observed in etched cross sections, is a function of the amount of phosphorus added to the vapor phase.
Keywords :
Crystals; Epitaxial growth; Etching; Gallium arsenide; Helium; Pressure control; Stacking; Surface morphology; Temperature control; Tungsten;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1975.18209
Filename :
1478044
Link To Document :
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