DocumentCode :
1050662
Title :
High-Density and Low-Leakage-Current MIM Capacitor Using Stacked 
Insulators
Author :
Lin, S.H. ; Chiang, K.C. ; Chin, Albert ; Yeh, F.S.
Author_Institution :
Dept. of Electron. Eng., Nat. Tsing Hua Univ., Hsinchu
Volume :
30
Issue :
7
fYear :
2009
fDate :
7/1/2009 12:00:00 AM
Firstpage :
715
Lastpage :
717
Abstract :
We have fabricated high-kappa Ni/TiO2/ZrO2/TiN metal-insulator-metal (MIM) capacitors. A low leakage current of 8 times 10-8 A/cm2 at 125degC was obtained with a high 38- fF/mum2 capacitance density and better than the ZrO2 MIM capacitors. The excellent device performance is due to the lower electric field in 9.5-nm-thick TiO2/ZrO2 devices to decrease the leakage current and to a higher kappa value of 58 for TiO2 as compared with that of ZrO2 to preserve the high capacitance density.
Keywords :
MIM devices; capacitance; capacitors; dielectric materials; high-k dielectric thin films; leakage currents; nickel; titanium compounds; zirconium compounds; Ni-TiO2-ZrO2-TiN; capacitance density; high density capacitor; high-kappa metal-insulator-metal capacitor; low leakage current MIM capacitor; size 9.5 nm; stacked insulators; temperature 125 degC; $hbox{TiO}_{2}$ $hbox{ZrO}_{2}$ $kappa$
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2009.2022775
Filename :
5061532
Link To Document :
