DocumentCode
105068
Title
A High-Frequency Transconductance Method for Characterization of High- 
Border Traps in III-V MOSFETs
Author
Johansson, Susie ; Berg, Markus ; Persson, Karl-Magnus ; Lind, Erik
Author_Institution
Div. of Solid State Phys., Lund Univ., Lund, Sweden
Volume
60
Issue
2
fYear
2013
fDate
Feb. 2013
Firstpage
776
Lastpage
781
Abstract
A novel method that reveals the spatial distribution of border traps in III-V metal-oxide-semiconductor field-effect transistors (MOSFETs) is presented. The increase in transconductance with frequency is explored in a very wide frequency range (1 Hz-70 GHz) and a distributed RC network is used to model the oxide and trap capacitances. An evaluation of vertical InAs nanowire MOSFETs and surface-channel InGaAs MOSFETs with Al2O3/HfO2 high-κ gate dielectric shows a deep border-trap density of about 1020cm-3eV-1 and a near-interfacial trap density of about 1021cm-3eV-1. The latter causes an almost steplike increase in transconductance at 1-10 GHz. This demonstrates the importance of high-frequency characterization of high-κ dielectrics in III-V MOSFETs.
Keywords
III-V semiconductors; RC circuits; gallium arsenide; high-k dielectric thin films; indium compounds; nanowires; power MOSFET; semiconductor device models; III-V MOSFET; III-V metal-oxide-semiconductor field-effect transistors; InGaAs; border-trap density; distributed RC network; frequency 1 Hz to 70 GHz; high-κ border trap characterization; high-κ gate dielectric; high-frequency characterization; high-frequency transconductance method; nanowire MOSFET; near-interfacial trap density; oxide capacitance; spatial distribution; surface-channel MOSFET; trap capacitance; Capacitance; Frequency measurement; Logic gates; MOSFETs; Semiconductor device measurement; Transconductance; Voltage measurement; $ hbox{HfO}_{2}$ $hbox{Al}_{2}hbox{O}_{3}$ $k$
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2012.2231867
Filename
6392927
Link To Document