DocumentCode :
1050697
Title :
Analysis of Power-Cycling Capability of IGBT Modules in a Conventional Matrix Converter
Author :
Wei, Lixiang ; Lukaszewski, Richard A. ; Lipo, Thomas A.
Author_Institution :
Rockwell Autom.-Allen Bradley, Mequon, WI, USA
Volume :
45
Issue :
4
fYear :
2009
Firstpage :
1443
Lastpage :
1451
Abstract :
This paper analyzes the power-cycling capability of insulated-gate bipolar transistor (IGBT) modules in a conventional matrix converter used as a motor drive. The analysis is made under various conditions for this topology, including low-speed-operation capability, high-speed thermal- and power-cycling capabilities, etc. It was found that the power-cycling mean time to failure of IGBT in a matrix converter is low when the input and output frequencies are close to each other or when the output frequency of the converter is low. As a result, the chip size of the conventional matrix converter may be larger than the other candidates. In the end of this paper, some guidance for designing a matrix converter for long-term reliabilities is also discussed.
Keywords :
failure analysis; insulated gate bipolar transistors; matrix convertors; power semiconductor devices; IGBT module; conventional matrix converter; high speed thermal capability; insulated gate bipolar transistor; low speed operation; mean time to failure; power cycling capability; Conventional matrix converter; mean time to failure (MTTF); power cycle; thermal cycle;
fLanguage :
English
Journal_Title :
Industry Applications, IEEE Transactions on
Publisher :
ieee
ISSN :
0093-9994
Type :
jour
DOI :
10.1109/TIA.2009.2023556
Filename :
5061536
Link To Document :
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