DocumentCode :
1050770
Title :
A rational consideration of space charge
Author :
Boggs, Steven
Author_Institution :
Electr. Insulation Res. Center, Connecticut Univ., Storrs, CT, USA
Volume :
20
Issue :
4
fYear :
2004
Firstpage :
22
Lastpage :
27
Abstract :
Space charge formation and its increase with field under DC conditions is not a mystical phenomenon. The increase in space charge with applied field is an obvious and inevitable result of the interaction of field-dependent current density with spatially inhomogeneous resistivity. For common polymeric dielectrics, the current density makes a transition from a linear function of field to an exponential function of field at around 10 kV/mm. This causes a similar transition in the sample space charge in the same field region. However, this transition has no obvious connection with aging, and if it does prove to have a connection, the driving force is the rapidly increasing current density and not the space charge, which is a result thereof. As to the issue of the accuracy of space charge measurements, it may be more important to focus on providing a physical mechanism for 1-eV deep traps at an average separation of 3 nm within a polymeric dielectric. This would bring about the ability to engineer important dielectric properties as well as improved understanding of the physical basis of aging and other important phenomena in dielectrics.
Keywords :
current density; dielectric materials; electric breakdown; electrical resistivity; polymers; space charge; 1 eV; aging; exponential function; field-dependent current density; linear function; polymeric dielectric; polymeric dielectrics; space charge measurements; spatially inhomogeneous resistivity; Aging; Charge measurement; Conductivity; Current density; Current measurement; Dielectric measurements; Electric breakdown; Oxidation; Polymers; Space charge;
fLanguage :
English
Journal_Title :
Electrical Insulation Magazine, IEEE
Publisher :
ieee
ISSN :
0883-7554
Type :
jour
DOI :
10.1109/MEI.2004.1318836
Filename :
1318836
Link To Document :
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