• DocumentCode
    1050774
  • Title

    GaAs—(Ga,Al) As double heterostructure light emitting diode

  • Author

    Ikeda, Ken-ichi ; Tanaka, Toshbo ; Ishii, Makoto ; Ito, Akiko

  • Author_Institution
    Mitsubishi Electric Corporation, Itami, Hyogo, Japan
  • Volume
    22
  • Issue
    9
  • fYear
    1975
  • fDate
    9/1/1975 12:00:00 AM
  • Firstpage
    799
  • Lastpage
    801
  • Abstract
    Double heterostructure light emitting diodes of GaAs- (Ga, Al)As have been developed for use as high radiance sources. The light is collected through a small window parallel to the emitting junction plane using a selective diffusion method for local contact. The external power efficiency is about 1 percent and the rise and fall time of the diodes is about 10 ns. Relatively constant optical output at current densities of 1800 A/cm2have so far been obtained for several thousand hours.
  • Keywords
    Application software; Boats; Computer displays; Gallium arsenide; Insulation life; Light emitting diodes; Nominations and elections; Plasma displays; Stimulated emission; Substrates;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1975.18223
  • Filename
    1478058
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1050774