• DocumentCode
    1050808
  • Title

    A wide-band NMOS balanced modulator/amplifier which uses 1- mu m transistors for linearity

  • Author

    Garverick, Steven L. ; Sodini, Charles G.

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA
  • Volume
    23
  • Issue
    1
  • fYear
    1988
  • Firstpage
    195
  • Lastpage
    198
  • Abstract
    The saturated drain current of short-channel (1 mu m) NMOS transistors is nearly linear with gate drive. A wideband balanced modulator/amplifier which exploits this property to achieve low distortion is described. Operated with a 5-V power supply, the circuit has a gain of 10 with respect to the modulating input, an intrinsic 3-dB bandwidth near 100 MHz, and nonlinearity less than 0.5% for a voltage swing of +or-2 V. This input can serve as modulation for a square wave carrier with equally good linearity.<>
  • Keywords
    field effect integrated circuits; modulators; wideband amplifiers; 1 micron; gate drive; linearity; low distortion; modulating input; nonlinearity; saturated drain current; square wave carrier; voltage swing; wide-band NMOS balanced modulator/amplifier; Broadband amplifiers; Circuits; Degradation; Gain control; Linearity; MOS devices; MOSFETs; Power supplies; Signal generators; Voltage;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/4.277
  • Filename
    277