DocumentCode
1050808
Title
A wide-band NMOS balanced modulator/amplifier which uses 1- mu m transistors for linearity
Author
Garverick, Steven L. ; Sodini, Charles G.
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA
Volume
23
Issue
1
fYear
1988
Firstpage
195
Lastpage
198
Abstract
The saturated drain current of short-channel (1 mu m) NMOS transistors is nearly linear with gate drive. A wideband balanced modulator/amplifier which exploits this property to achieve low distortion is described. Operated with a 5-V power supply, the circuit has a gain of 10 with respect to the modulating input, an intrinsic 3-dB bandwidth near 100 MHz, and nonlinearity less than 0.5% for a voltage swing of +or-2 V. This input can serve as modulation for a square wave carrier with equally good linearity.<>
Keywords
field effect integrated circuits; modulators; wideband amplifiers; 1 micron; gate drive; linearity; low distortion; modulating input; nonlinearity; saturated drain current; square wave carrier; voltage swing; wide-band NMOS balanced modulator/amplifier; Broadband amplifiers; Circuits; Degradation; Gain control; Linearity; MOS devices; MOSFETs; Power supplies; Signal generators; Voltage;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/4.277
Filename
277
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