Title :
Light Output Improvement of InGaN-Based Light-Emitting Diodes by Microchannel Structure
Author :
Chang, Liann-Be ; Chang, Yuan-Hsiao ; Jeng, Ming-Jer
Author_Institution :
Chang-Gung Univ., Taoyuan
Abstract :
We propose a microchannel structure with deep holes to enhance the extraction efficiency of InGaN-based light-emitting diodes (LEDs). Two different depth microchannel LEDs are examined experimentally. One has air holes penetrated through the active layer and the other does not. It is found that the light extraction efficiency in the LED with the penetrated air holes is significant h larger than that in the LED without penetrating holes. The reason can be attributed to the microchannel waveguide behaviors. In comparison to the conventional LEDs, the light output power of our fabricated LEDs with and without penetrating holes improved by 43.5% and 5.1%, respectively.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; integrated optics; light emitting diodes; micro-optics; optical fabrication; optical materials; photonic crystals; InGaN - Interface; LED fabrication; air holes; depth microchannel LED; light extraction efficiency; light-emitting diodes; microchannel structure; microchannel waveguide behaviors; penetrating holes; Diffraction; Gallium nitride; Light emitting diodes; Microchannel; Optical reflection; Photonic crystals; Power generation; Quantum well devices; Refractive index; Solid state lighting; Extraction efficiency; light output power; light-emitting diodes (LEDs); microchannel structure;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2007.901591
