DocumentCode
1050851
Title
Improvement in the temperature characteristics of 630 nm band InGaAlP multiquantum-well laser diodes using a 15 degrees misoriented substrate
Author
Watanabe, Manabu ; Rennie, J. ; Okajima, M. ; Hatakoshi, G.
Author_Institution
Toshiba Corp., Kawasaki, Japan
Volume
29
Issue
3
fYear
1993
Firstpage
250
Lastpage
252
Abstract
InGaAlP multiquantum-well (MQW) laser diodes were prepared on a
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; semiconductor epitaxial layers; semiconductor lasers; vapour phase epitaxial growth; 15 degrees misorientation; 52 degC; 630 nm band; 630 to 632 nm; CW conditions; CW operation; GaAs substrates; InGaAsP; InGaAsP-GaAs; LD; MQW; NQW heterointerfaces; misoriented substrate; multiquantum-well laser diodes; semiconductors; temperature characteristics; visible lasers;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19930172
Filename
277152
Link To Document