Title :
Improvement in the temperature characteristics of 630 nm band InGaAlP multiquantum-well laser diodes using a 15 degrees misoriented substrate
Author :
Watanabe, Manabu ; Rennie, J. ; Okajima, M. ; Hatakoshi, G.
Author_Institution :
Toshiba Corp., Kawasaki, Japan
Abstract :
InGaAlP multiquantum-well (MQW) laser diodes were prepared on a
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; semiconductor epitaxial layers; semiconductor lasers; vapour phase epitaxial growth; 15 degrees misorientation; 52 degC; 630 nm band; 630 to 632 nm; CW conditions; CW operation; GaAs substrates; InGaAsP; InGaAsP-GaAs; LD; MQW; NQW heterointerfaces; misoriented substrate; multiquantum-well laser diodes; semiconductors; temperature characteristics; visible lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930172
