• DocumentCode
    1050925
  • Title

    Diffusion of delta doped boron in silicon following oxidation

  • Author

    O´Neill, A.G. ; Barlow, R.D. ; Biswas, R.G. ; Phillips, Jonathon ; Taylor, Stephen ; Gundlach, A.

  • Author_Institution
    Newcastle upon Tyne Univ., UK
  • Volume
    29
  • Issue
    3
  • fYear
    1993
  • Firstpage
    263
  • Lastpage
    264
  • Abstract
    Samples from a silicon wafer containing a boron doped delta layer were exposed to plasma oxidation and rapid thermal processing (RTP). It is demonstrated experimentally for the first time that there is no enhanced diffusion resulting from oxidation by plasma anodisation, making it well suited to complement low temperature processing.
  • Keywords
    boron; doping profiles; elemental semiconductors; oxidation; rapid thermal processing; silicon; B diffusion; RTP; Si wafers; Si:B; Si:B doped delta layer; activation anneal; low temperature processing; oxidation enhanced diffusion; plasma oxidation; rapid thermal processing; semiconductors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19930180
  • Filename
    277160
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1050925