Title :
Diffusion of delta doped boron in silicon following oxidation
Author :
O´Neill, A.G. ; Barlow, R.D. ; Biswas, R.G. ; Phillips, Jonathon ; Taylor, Stephen ; Gundlach, A.
Author_Institution :
Newcastle upon Tyne Univ., UK
Abstract :
Samples from a silicon wafer containing a boron doped delta layer were exposed to plasma oxidation and rapid thermal processing (RTP). It is demonstrated experimentally for the first time that there is no enhanced diffusion resulting from oxidation by plasma anodisation, making it well suited to complement low temperature processing.
Keywords :
boron; doping profiles; elemental semiconductors; oxidation; rapid thermal processing; silicon; B diffusion; RTP; Si wafers; Si:B; Si:B doped delta layer; activation anneal; low temperature processing; oxidation enhanced diffusion; plasma oxidation; rapid thermal processing; semiconductors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930180
