Title :
MOVPE grown InAlAs/InGaAs/InP MODFETs with very high fT
Author :
Nummila, K. ; Tong, Michael ; Ketterson, Andrew ; Adesida, I. ; Caneau, Catherine ; Bhat, Ritesh
Author_Institution :
Illinois Univ., Urbana, IL, USA
Abstract :
High-performance 0.15 mu m gate length modulation-doped field-effect transistors (MODFETs) have been fabricated on a lattice-matched InAlAs/InGaAs heterostructure grown by organic vapour phase epitaxy (MOVPE). Excellent ´kink-free´ DC characteristics with extrinsic transconductance gm of 1080 mS/mm at a drain current of 508 mA/mm have been achieved. A unity current-gain cutoff frequency fT of 187 GHz at room temperature has been measured, which is the highest value reported for MOVPE-grown lattice-matched InAlAs/InGaAs MODFETs.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor epitaxial layers; semiconductor growth; solid-state microwave devices; vapour phase epitaxial growth; 0.15 micron; 187 GHz; EHF; cutoff frequency; drain current; extrinsic transconductance; kinkfree characteristics; lattice-matched; room temperature; semiconductors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930187
