• DocumentCode
    1051007
  • Title

    MOVPE grown InAlAs/InGaAs/InP MODFETs with very high fT

  • Author

    Nummila, K. ; Tong, Michael ; Ketterson, Andrew ; Adesida, I. ; Caneau, Catherine ; Bhat, Ritesh

  • Author_Institution
    Illinois Univ., Urbana, IL, USA
  • Volume
    29
  • Issue
    3
  • fYear
    1993
  • Firstpage
    274
  • Lastpage
    275
  • Abstract
    High-performance 0.15 mu m gate length modulation-doped field-effect transistors (MODFETs) have been fabricated on a lattice-matched InAlAs/InGaAs heterostructure grown by organic vapour phase epitaxy (MOVPE). Excellent ´kink-free´ DC characteristics with extrinsic transconductance gm of 1080 mS/mm at a drain current of 508 mA/mm have been achieved. A unity current-gain cutoff frequency fT of 187 GHz at room temperature has been measured, which is the highest value reported for MOVPE-grown lattice-matched InAlAs/InGaAs MODFETs.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor epitaxial layers; semiconductor growth; solid-state microwave devices; vapour phase epitaxial growth; 0.15 micron; 187 GHz; EHF; cutoff frequency; drain current; extrinsic transconductance; kinkfree characteristics; lattice-matched; room temperature; semiconductors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19930187
  • Filename
    277167
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1051007