DocumentCode :
1051112
Title :
High-power, high-brightness, mJ Q-switched ytterbium-doped fibre laser
Author :
Piper, A. ; Malinowski, A. ; Furusawa, K. ; Richardson, D.J.
Author_Institution :
Optoelectronic Res. Centre, Univ. of Southampton, UK
Volume :
40
Issue :
15
fYear :
2004
fDate :
7/22/2004 12:00:00 AM
Firstpage :
928
Lastpage :
929
Abstract :
A simple diode-pumped, Q-switched fibre laser is reported based on large mode area ytterbium-doped fibre capable of producing pulses with a high beam quality (M2=1.1), a duration of ∼40 ns and energies as high as 1.2 mJ at a repetition rate of 10 kHz. This combination of desirable beam qualities makes the source attractive for a range of industrial applications currently serviced by conventional bulk crystal/glass based Q-switched laser systems.
Keywords :
Q-switching; fibre lasers; semiconductor lasers; silicon compounds; ytterbium; 1.2 mJ; 10 kHz; 40 ns; Q switched ytterbium doped fibre laser; SiO2:Yb; crystal-glass based Q switched laser system; diode pumped fibre laser; high brightness fibre laser; high power fibre laser; silica;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20045661
Filename :
1318873
Link To Document :
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