Title :
A GaAs MCM power amplifier of 3.6 V operation with high efficiency of 49% for 0.9 GHz digital cellular phone systems
Author :
Tateoka, Kazuki ; Sugimura, Akihisa ; Furukawa, Hidetoshi ; Yoshikawa, Noriyuki ; Kanazawa, Kunihiko
Author_Institution :
Electron. Res. Lab., Matsushita Electron. Corp., Osaka, Japan
fDate :
11/1/1995 12:00:00 AM
Abstract :
An extremely small GaAs PA (power amplifier) has been implemented using AlN multilayer MCM for 0.9 GHz digital cellular phones. The present PA exhibited high efficiency of 49% with drain supply voltage as low as 3.6 V. This PA was designed to provide matching circuits with the maximum gain at the input side and the minimum intermodulation distortion at the output side. Nonlinear simulation result verifies that this matching condition provides the lowest π/4-shift QPSK distortion and indicates that the phase shift of the amplifier is mainly caused by source-drain resistance
Keywords :
III-V semiconductors; UHF power amplifiers; cellular radio; cordless telephone systems; digital radio; gallium arsenide; impedance matching; intermodulation distortion; multichip modules; quadrature phase shift keying; π/4-shift QPSK distortion; 0.9 GHz; 3.6 V; 49 percent; AlN; GaAs; MCM power amplifier; digital cellular phone systems; drain supply voltage; efficiency; matching circuits; matching condition; maximum gain; minimum intermodulation distortion; multilayer MCM; source-drain resistance; Cellular phones; Circuit simulation; Gallium arsenide; High power amplifiers; Intermodulation distortion; Low voltage; Nonhomogeneous media; Operational amplifiers; Power amplifiers; Quadrature phase shift keying;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
