• DocumentCode
    1051167
  • Title

    Linear networks based on transistors

  • Author

    Vittoz, E.A. ; Arreguit, X.

  • Author_Institution
    Centre Suisse d´Electron. et de Microtech., Neuchatel, Switzerland
  • Volume
    29
  • Issue
    3
  • fYear
    1993
  • Firstpage
    297
  • Lastpage
    299
  • Abstract
    Any network of linear resistors in which only currents are considered can be implemented solely by MOS transistors. Values are controlled by sizes of transistors in the general case, and by their gate voltage for weak inversion. The voltage range is compressed and the concept of virtual ground facilitates the extraction of any current flowing to ground. An edge-detecting silicon retina is described as an example of application.
  • Keywords
    field effect transistor circuits; insulated gate field effect transistors; linear network synthesis; network parameters; MOS transistors; edge-detecting silicon retina; gate voltage; linear resistors; sizes; virtual ground; voltage range; weak inversion;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19930203
  • Filename
    277183