DocumentCode
1051167
Title
Linear networks based on transistors
Author
Vittoz, E.A. ; Arreguit, X.
Author_Institution
Centre Suisse d´Electron. et de Microtech., Neuchatel, Switzerland
Volume
29
Issue
3
fYear
1993
Firstpage
297
Lastpage
299
Abstract
Any network of linear resistors in which only currents are considered can be implemented solely by MOS transistors. Values are controlled by sizes of transistors in the general case, and by their gate voltage for weak inversion. The voltage range is compressed and the concept of virtual ground facilitates the extraction of any current flowing to ground. An edge-detecting silicon retina is described as an example of application.
Keywords
field effect transistor circuits; insulated gate field effect transistors; linear network synthesis; network parameters; MOS transistors; edge-detecting silicon retina; gate voltage; linear resistors; sizes; virtual ground; voltage range; weak inversion;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19930203
Filename
277183
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