• DocumentCode
    1051174
  • Title

    Diamond-microchip GaInNAs vertical external-cavity surface-emitting laser operating CW at 1315 nm

  • Author

    Smith, S.A. ; Hopkins, J.-M. ; Hastie, J.E. ; Burns, D. ; Calvez, S. ; Dawson, M.D. ; Jouhti, T. ; Kontinnen, J. ; Pessa, M.

  • Author_Institution
    Inst. of Photonics, Univ. of Strathclyde, Glasgow, UK
  • Volume
    40
  • Issue
    15
  • fYear
    2004
  • fDate
    7/22/2004 12:00:00 AM
  • Firstpage
    935
  • Lastpage
    936
  • Abstract
    What is believed to be the first microchip-format vertical external-cavity surface-emitting laser (VECSEL) operating at 1.3 μm is reported. Fundamental-mode continuous-wave output powers >120 mW were achieved from a cavity volume ∼0.001 mm3 using a diode-pumped GaInNAs VECSEL structure capillary-bonded to a dielectric-mirror-coated single-crystal diamond heatspreader.
  • Keywords
    III-V semiconductors; diamond; elemental semiconductors; gallium arsenide; gallium compounds; indium compounds; laser mirrors; microchip lasers; surface emitting lasers; wide band gap semiconductors; 1.3 micron; 1315 nm; GaInNAs vertical external-cavity surface-emitting laser; GaInNAs-C; capillary-bonding; continuous-wave output; diamond-microchip VCSEL; dielectric-mirror-coated heatspreader; diode-pumped GaInNAs VECSEL structure; single-crystal diamond heatspreader;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20045378
  • Filename
    1318878
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1051174