Power-delay energy comparison of bipolar and IGFET digital devices and circuits

Previous analysis shows the IGFET to be dynamically equivalent to a bipolar transistor operating with a base series capacitance equal to the IGFET gate capacitance. This equivalence illuminates the physical reasons for disadvantageous power-delay energy characteristics compared to bipolar devices, devices which operate with Boltzmann barrier principles and thus seem to most closely approach the fundamental power-delay thermal limit. Means for reducing IGFET disadvantages are discussed.