• DocumentCode
    1051255
  • Title

    Subthreshold slope for insulated gate field-effect transistors

  • Author

    Troutman, R.R.

  • Author_Institution
    IBM System Products Division, Essex Junction, Vt.
  • Volume
    22
  • Issue
    11
  • fYear
    1975
  • fDate
    11/1/1975 12:00:00 AM
  • Firstpage
    1049
  • Lastpage
    1051
  • Abstract
    An explicit expression has been derived for the subthreshold slope of an insulated gate field-effect transistor. This expression is used to explore the influence of surface band-bending, gate insulator thickness, substrate doping, substrate bias, and temperature.
  • Keywords
    Circuits; Doping; FETs; Insulation; Niobium; Permittivity; Silicon compounds; Subthreshold current; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1975.18269
  • Filename
    1478104
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1051255