• DocumentCode
    1051262
  • Title

    A modified linear sweep technique for MOS-C generation rate measurements

  • Author

    Pierret, R.F. ; Small, D.W.

  • Author_Institution
    Purdue University, West Lafayette, Ind.
  • Volume
    22
  • Issue
    11
  • fYear
    1975
  • fDate
    11/1/1975 12:00:00 AM
  • Firstpage
    1051
  • Lastpage
    1052
  • Abstract
    A modified linear sweep technique is described which allows one to rapidly determine the carrier generation rate versus semiconductor depletion width dependence exhibited by deeply depleted MOS-C structures. Although requiring more sophisticated instrumentation, the modified procedure is more flexible, more accurate, and less time-consuming than the original technique.
  • Keywords
    Capacitance; Circuit theory; Instruments; Insulation; Niobium; Notice of Violation; Performance evaluation; Silicon; Solid state circuits; Temperature dependence;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1975.18270
  • Filename
    1478105
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1051262