Title :
I-6 scanned surface photovoltage images of defects on semiconductors
Author_Institution :
IBM Thomas J. Watson Research Center, Yorktown Heights, N.Y.
Abstract :
Summary form only. An abstract of the above-titled article taken from the Device Research Conference (24-26 June 1975, Carleton University, Ottawa, Ont., Canada) is presented.
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1975.18276
