Title :
Amplification of Nonlinearity in Multiple Gate Transistor Millimeter Wave Mixer for Improvement of Linearity and Noise Figure
Author :
Chieh-Lin Wu ; Chikuang Yu ; Kenneth, K.O.
Author_Institution :
Silicon Microwave Integrated Circuits & Syst. Res. Group, Univ. of Texas at Dallas, Richardson, TX, USA
Abstract :
Current amplification of nonlinearity in a multiple gate transistor cell is proposed to simultaneously improve the linearity and noise performance of amplifier and mixer, and demonstrated in a mixer fabricated with 45 nm SOI CMOS. The mixer achieves output third order intercept point (OIP3) of 21.4 dBm, power gain of 3.4 dB, and single side band noise figure (NF) of 9.5 dB at radio frequency of 31 GHz. The OIP3 is ~ 5 dB higher and NF is ~ 4 dB lower than the best for CMOS millimeter wave mixers.
Keywords :
CMOS analogue integrated circuits; millimetre wave amplifiers; millimetre wave mixers; millimetre wave transistors; silicon-on-insulator; CMOS millimeter wave mixers; OIP3; SOI CMOS; Si; amplifier; frequency 31 GHz; gain 3.4 dB; multiple gate transistor cell; multiple gate transistor millimeter wave mixer; noise figure 9.5 dB; output third order intercept point; single side band noise figure; size 45 nm; CMOS integrated circuits; Gain; Logic gates; Mixers; Noise; Radio frequency; Transistors; CMOS; Gilbert cell; MGTR; SOI; down-conversion mixer; millimeter wave;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2015.2409784
