Design consideration for an analog memory based on an extended Bloch-Néel domain wall creep model

This paper presents an extended Bloch-Néel wall-transition creep model in which the hard-locking effect, where the average magnetization does not return to the easy axis after the hard-axis fields have been removed, is included. The remarkable improvement in analog characteristics of electrodeposited thin magnetic film wire was accomplished by special driving pulse patterns based on this creep model. The resultant characteristics are appropriate for the analog memory devices used in pattern information processing systems.