Inverse Class-E Amplifier With Transmission-Line Harmonic Suppression

Author

Mury, Thian ; Fusco, Vincent F.

Author_Institution

Queen´´s Univ. of Belfast, Belfast

Volume

54

Issue

7

fYear

2007

fDate

7/1/2007 12:00:00 AM

Firstpage

1555

Lastpage

1561

Abstract

This paper reports on the design methodology and experimental characterization of the inverse class-E power amplifier. A demonstration amplifier with excellent second and third harmonic-suppression levels has been designed, constructed, and measured. The circuit fabricated using a 1.2-mm gate-width GaAs MESFET is shown to be able to deliver 22-dBm output power at 2.3 GHz. The amplifier achieve a peak power-added efficiency of 64% and drain efficiency of 69%, and exhibits 11.6 dB power gain when operated from a 3-V supply voltage. Comparisons of simulated and measured results are given with good agreement between them being obtained. Experimental results are presented for the amplifier´s response to Gaussian minimum shift keying modulation, where a peak error vector modulation value of 0.6% is measured.

Keywords

III-V semiconductors; Schottky gate field effect transistors; UHF power amplifiers; gallium arsenide; harmonics suppression; transmission lines; GaAs - Interface; Gaussian minimum; frequency 2.3 GHz; gain 11.6 dB; gate-width MESFET; inverse class-E amplifier; power amplifier; shift keying modulation; transmission-line harmonic suppression; voltage 3 V; Circuit simulation; Design methodology; Gain; Gallium arsenide; Harmonics suppression; MESFET circuits; Power amplifiers; Power generation; Transmission lines; Voltage; Class E; GaAs MESFET; Gaussian minimum shift keying (GMSK) modulation; RF amplifier; harmonic suppression; high efficiency; transmission line; zero current switching;

fLanguage

English

Journal_Title

Circuits and Systems I: Regular Papers, IEEE Transactions on

Publisher

ieee

ISSN

1549-8328

Type

jour

DOI

10.1109/TCSI.2007.899617

Filename

4268412