• DocumentCode
    1051674
  • Title

    V-2 reproducible, high carrier concentration implantations of selenium and silicon into GaAs

  • Author

    Donnelly, J.P. ; Lindley, W.T. ; Hurwitz, C.E.

  • Author_Institution
    Massachusetts Institute of Technology, Lexington, Mass
  • Volume
    22
  • Issue
    11
  • fYear
    1975
  • Firstpage
    1065
  • Lastpage
    1065
  • Abstract
    Summary form only. An abstract of the above-titled article taken from the Device Research Conference (24-26 June 1975, Carleton University, Ottawa, Ont., Canada) is presented.
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1975.18312
  • Filename
    1478147
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1051674