Title :
Enhanced Carbon Confinement of Ultranarrow Boron Profiles in SiGeC HBTs
Author :
Enicks, Darwin ; Oleszek, Gerald
Author_Institution :
Dept. of Electr. & Comput. Eng., Colorado Univ., Colorado Springs, CO
Abstract :
This paper reports on observations of enhanced carbon confinement of ultranarrow boron profiles in silicon-germanium-carbon heterojunction bipolar transistors (SiGeC HBTs). Electrical measurements of HBT devices with base regions formed during a low-pressure chemical-vapor deposition, with this method shows that a current gain (beta) is increased, base sheet resistance (Rbs) is reduced, and the maximum oscillation frequency (fmax) is improved
Keywords :
Ge-Si alloys; boron; carbon compounds; chemical vapour deposition; doping profiles; heterojunction bipolar transistors; semiconductor device measurement; HBT devices; SiGeC; enhanced carbon confinement; heterojunction bipolar transistors; low-pressure chemical-vapor deposition; silicon-germanium-carbon; ultranarrow boron profile; Boron; Germanium silicon alloys; Heterojunction bipolar transistors; Hydrogen; Inductors; Phase change materials; Semiconductor films; Silicon germanium; Springs; Substrates; Boron; diffusion processes; heterojunction bipolar transistors (HBTs); silicon–germanium (SiGe);
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2006.877014
