• DocumentCode
    1051993
  • Title

    The movement of surface dislocation loops in GaAs by the application of an electric field

  • Author

    Weiss, Bernard L.

  • Author_Institution
    University of Newcastle-upon-Tyne, Newcastle-upon-Tyne NEL, England
  • Volume
    23
  • Issue
    1
  • fYear
    1976
  • fDate
    1/1/1976 12:00:00 AM
  • Firstpage
    42
  • Lastpage
    44
  • Abstract
    Results which show that surface dislocation loops in GaAs may be moved by the application of high electric fields are presented. These results show the feasability of a degradation mechanism for high-field GaAs devices based on the multiplication of dislocations by the piezoelectric stresses produced in the material.
  • Keywords
    Degradation; Electrodes; Etching; Gallium arsenide; Gunn devices; Piezoelectric materials; Semiconductor materials; Surface finishing; Temperature; Thermal stresses;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1976.18344
  • Filename
    1478358
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1051993