Title :
The movement of surface dislocation loops in GaAs by the application of an electric field
Author :
Weiss, Bernard L.
Author_Institution :
University of Newcastle-upon-Tyne, Newcastle-upon-Tyne NEL, England
fDate :
1/1/1976 12:00:00 AM
Abstract :
Results which show that surface dislocation loops in GaAs may be moved by the application of high electric fields are presented. These results show the feasability of a degradation mechanism for high-field GaAs devices based on the multiplication of dislocations by the piezoelectric stresses produced in the material.
Keywords :
Degradation; Electrodes; Etching; Gallium arsenide; Gunn devices; Piezoelectric materials; Semiconductor materials; Surface finishing; Temperature; Thermal stresses;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1976.18344
